64 research outputs found

    Overload robust IGBT design for SSCB application

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    This paper presents an optimised power semiconductor architecture based on the CIGBT approach to be used in solid-state circuit breaker (SSCB) applications where the conduction losses have to be as low as possible without compromising the forward voltage blocking capability. Indeed, a high overcurrent turn-off and short-circuit withstand capabilities have to be ensured. Starting from a standard NPT-IGBT design for switching applications, the results show that the proposed device, which is optimised by the application of the individual clustered concept, offers a reduction in conduction losses of 13%, without compromise on voltage blocking capability. An original design solution is implemented to further ensure short-circuit and overload turn-off capabilities at maximum ambient temperature and twice the nominal rated current

    ブンカ シュウカン テキ サイオ ウメル コミュニティ ツウヤク トハ

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    This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown events. Therefore, avalanche ruggedness is an important feature of power devices enabling snubber-less converter design and is also a desired feature in certain applications such as automotive. It is essential to thoroughly characterize SiC power MOSFETs for better understanding of their robustness and more importantly of their corresponding underling physical mechanisms responsible for failure in order to inform device design and technology evolution. Experimental results during UIS at failure and 2D TCAD simulation results are presented in this study

    MYCN repression of Lifeguard/FAIM2 enhances neuroblastoma aggressiveness

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    Neuroblastoma (NBL) is the most common solid tumor in infants and accounts for 15% of all pediatric cancer deaths. Several risk factors predict NBL outcome: age at the time of diagnosis, stage, chromosome alterations and MYCN (V-Myc Avian Myelocytomatosis Viral Oncogene Neuroblastoma-Derived Homolog) amplification, which characterizes the subset of the most aggressive NBLs with an overall survival below 30%. MYCN-amplified tumors develop exceptional chemoresistance and metastatic capacity. These properties have been linked to defects in the apoptotic machinery, either by silencing components of the extrinsic apoptotic pathway (e.g. caspase-8) or by overexpression of antiapoptotic regulators (e.g. Bcl-2, Mcl-1 or FLIP). Very little is known on the implication of death receptors and their antagonists in NBL. In this work, the expression levels of several death receptor antagonists were analyzed in multiple human NBL data sets. We report that Lifeguard (LFG/FAIM2 (Fas apoptosis inhibitory molecule 2)/NMP35) is downregulated in the most aggressive and undifferentiated tumors. Intringuingly, although LFG has been initially characterized as an antiapoptotic protein, we have found a new association with NBL differentiation. Moreover, LFG repression resulted in reduced cell adhesion, increased sphere growth and enhanced migration, thus conferring a higher metastatic capacity to NBL cells. Furthermore, LFG expression was found to be directly repressed by MYCN at the transcriptional level. Our data, which support a new functional role for a hitherto undiscovered MYCN target, provide a new link between MYCN overexpression and increased NBL metastatic properties

    FAIM-L Is an IAP-Binding Protein That Inhibits XIAP Ubiquitinylation and Protects from Fas-Induced Apoptosis

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    The neuronal long isoform of Fas Apoptotic Inhibitory Molecule (FAIM-L) protects from death receptor (DR)-induced apoptosis, yet its mechanism of protection remains unknown. Here, we show that FAIM-L protects rat neuronal Type II cells from Fas-induced apoptosis. XIAP has previously emerged as a molecular discriminator that is upregulated in Type II and downregulated in Type I apoptotic signaling. We demonstrate that FAIM-L requires sustained endogenous levels of XIAP to protect Type II cells as well as murine cortical neurons from Fas-induced apoptosis. FAIM-L interacts with the BIR2 domain of XIAP through an IAP-binding motif, the mutation of which impairs the antiapoptotic function of FAIM-L. Finally, we report that FAIM-L inhibits XIAP auto-ubiquitinylation and maintains its stability, thus conferring protection from apoptosis. Our results bring new understanding of the regulation of endogenous XIAP by a DR antagonist, pointing out at FAIM-L as a promising therapeutic tool for protection from apoptosis in pathological situations where XIAP levels are decreased.This work was funded by the Spanish Government Ministerio de Sanidad y Consumo (Centro de Investigación Biomédica en Red sobre Enfermedades Neurodegenerativas, CB06/05/1104 to J.X.C.), Ministerio de Economía y Competitividad (SAF2010–19953 to J.X.C.; SAF2012–31485 to V.J.Y.), Instituto de Salud Carlos III (CP11/00052 to M.F.S.), and the Generalitat de Catalunya (Suport als Grups de Recerca Consolidats 2009SGR346). F.M.-F. and L.P.-F. are supported by postgraduate fellowships from the Spanish Government Ministerio de Educación y Ciencia. J.U. is supported by a postgraduate fellowship from the Generalitat de Catalunya. R.S.M. and V.J.Y. were under the Juan de la Cierva and the Ramon y Cajal programs, respectively, from the Ministerio de Educación y Ciencia (Spain), cofinanced by the European Social Fund. M.F.S. is under the Miguel Servet program from the Instituto de Salud Carlos III and cofinanced by the European Regional Development Fund

    3.3 kV PT-IGBT with voltage-sensor monolithically integrated

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    An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor.Peer Reviewe

    The Subfamily Ataxioceratinae (Ammonoidea) from Upper Oxfordian of the Submediterranean Province: origin and evolution

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    The subfamily Ataxioceratinae Buckman arises at the turn of the Middle-Upper Oxfordian (Upper Jurassic) in the South-European Platform, spreading mostly throughout the Submediterranean province during Upper Oxfordian-Lower Kimmeridgian times. The genus Orthosphinctes Schimdiwoíf, type-species Ammonites tizianí Omt, is the first genus of this family and is first recorded al the Bifurcatus-Bimammatum Zone boundary in most of the West-Tethys areas. The successive forms of this genus appear fairly well-represented all across the Iberian Range (E Spain), allowing the recognition of many Orthosphinctes biohorizons within the classical biosiratigraphic scheme for the Upper Oxfordian in the Submeditarranean Province. The origin of the genus Subnebrodites at the base of the Planula Zone is proposed from the main Orthosphinctes stem via the 'intermediate', synthetic form O. fontannessi (Chofpaj
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